3,929 research outputs found

    Effect of FSH on testicular morphology and spermatogenesis in gonadotrophin-deficient hypogonadal mice lacking androgen receptors

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    Follicle stimulating hormone (FSH) and androgen act to stimulate and maintain spermatogenesis. FSH acts directly on the Sertoli cells to stimulate germ cell number and acts indirectly to increase androgen production by the Leydig cells. In order to differentiate between the direct effects of FSH on spermatogenesis and those mediated indirectly through androgen action we have crossed hypogonadal (hpg) mice which lack gonadotrophins with mice lacking androgen receptors (AR) either ubiquitously (ARKO) or specifically on the Sertoli cells (SCARKO). These hpg.ARKO and hpg.SCARKO mice were treated with recombinant FSH for 7 days and testicular morphology and cell numbers assessed. In untreated hpg and hpg.SCARKO mice germ cell development was limited and did not progress beyond the pachytene stage. In hpg.ARKO mice testes were smaller with fewer Sertoli cells and germ cells compared to hpg mice. Treatment with FSH had no effect on Sertoli cell number but significantly increased germ cell numbers in all groups. In hpg mice FSH increased numbers of spermatogonia and spermatocytes and induced round spermatid formation. In hpg.SCARKO and hpg.ARKO mice, in contrast, only spermatogonial and spermatocyte numbers were increased with no formation of spermatids. Leydig cell numbers were increased by FSH in hpg and hpg.SCARKO mice but not in hpg.ARKO mice. Results show that in rodents 1) FSH acts to stimulate spermatogenesis through an increase in spermatogonial number and subsequent entry of these cells into meiosis, 2) FSH has no direct effect on the completion of meiosis and 3) FSH effects on Leydig cell number are mediated through interstitial ARs

    Androgen-induced rhox homeobox genes modulate the expression of AR-regulated genes

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    Rhox5, the founding member of the reproductive homeobox on the X chromosome (Rhox) gene cluster, encodes a homeodomain-containing transcription factor that is selectively expressed in Sertoli cells, where it promotes the survival of male germ cells. To identify Rhox5-regulated genes, we generated 15P-1 Sertoli cell clones expressing physiological levels of Rhox5 from a stably transfected expression vector. Microarray analysis identified many genes altered in expression in response to Rhox5, including those encoding proteins controlling cell cycle regulation, apoptosis, metabolism, and cell-cell interactions. Fifteen of these Rhox5-regulated genes were chosen for further analysis. Analysis of Rhox5-null male mice indicated that at least 9 of these are Rhox5-regulated in the testes in vivo. Many of them have distinct postnatal expression patterns and are regulated by Rhox5 at different postnatal time points. Most of them are expressed in Sertoli cells, indicating that they are candidates to be directly regulated by Rhox5. Transfection analysis with expression vectors encoding different mouse and human Rhox family members revealed that the regulatory response of a subset of these Rhox5-regulated genes is both conserved and redundant. Given that Rhox5 depends on AR for expression in Sertoli cells, we examined whether some Rhox5-regulated genes are also regulated by androgen receptor (AR). We provide several lines of evidence that this is the case, leading us to propose that RHOX5 serves as a key intermediate transcription factor that directs some of the actions of AR in the testes

    On reductions of some KdV-type systems and their link to the quartic He'non-Heiles Hamiltonian

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    A few 2+1-dimensional equations belonging to the KP and modified KP hierarchies are shown to be sufficient to provide a unified picture of all the integrable cases of the cubic and quartic H\'enon-Heiles Hamiltonians.Comment: 12 pages, 3 figures, NATO ARW, 15-19 september 2002, Elb

    Completeness of the cubic and quartic H\'enon-Heiles Hamiltonians

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    The quartic H\'enon-Heiles Hamiltonian H=(P12+P22)/2+(Ω1Q12+Ω2Q22)/2+CQ14+BQ12Q22+AQ24+(1/2)(α/Q12+β/Q22)−γQ1H = (P_1^2+P_2^2)/2+(\Omega_1 Q_1^2+\Omega_2 Q_2^2)/2 +C Q_1^4+ B Q_1^2 Q_2^2 + A Q_2^4 +(1/2)(\alpha/Q_1^2+\beta/Q_2^2) - \gamma Q_1 passes the Painlev\'e test for only four sets of values of the constants. Only one of these, identical to the traveling wave reduction of the Manakov system, has been explicitly integrated (Wojciechowski, 1985), while the three others are not yet integrated in the generic case (α,β,γ)≠(0,0,0)(\alpha,\beta,\gamma)\not=(0,0,0). We integrate them by building a birational transformation to two fourth order first degree equations in the classification (Cosgrove, 2000) of such polynomial equations which possess the Painlev\'e property. This transformation involves the stationary reduction of various partial differential equations (PDEs). The result is the same as for the three cubic H\'enon-Heiles Hamiltonians, namely, in all four quartic cases, a general solution which is meromorphic and hyperelliptic with genus two. As a consequence, no additional autonomous term can be added to either the cubic or the quartic Hamiltonians without destroying the Painlev\'e integrability (completeness property).Comment: 10 pages, To appear, Theor.Math.Phys. Gallipoli, 34 June--3 July 200

    Characterisation of multilayer ramp-type ReBa2Cu3O7-delta structures by scanning probe microscopy and high-resolution electron microscopy

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    We studied the morphology of ramps in REBa2Cu3O7 (REBCO) epitaxial films on SrTiO3 substrates, fabricated by RF magnetron sputter deposition and pulsed laser deposition (PLD), by scanning probe microscopy (SPM) and high resolution electron microscopy (HREM). The ramps were fabricated by Ar ion beam etching using masks of standard photoresist and TiN. AFM-studies on ramps in sputter deposited films show a strong dependence, i.e. formation of facets and ridges, on the angle of incidence of the ion beam with respect to the substrate surface as well as the rotation angle with respect to the crystal axes of the substrate. Ramps in pulsed laser deposited films did not show this dependence. Furthermore, we studied the effect of an anneal step prior to the deposition of barrier layers (i.e. PrBu2CU3O7, SrTiO3, CeO2) on the ramp. First results show a recrystallization of the ramp surface, resulting in terraces and a non-homogeneous growth of the barrier material on top of it. The thickness variations, for thin layers of barrier material, can even become much larger than expected from the amount of deposited material and are dependent on the deposition and anneal conditions. HREM studies show a well defined interface between barrier layer and electrodes. The angle of the ramp depends on the etch rate of the mask and REBCO, and on the angle of incidence of the ion beam. TiN has a much lower etch rate compared to photoresist, resulting in an angle of the ramp comparable to the angle of incidence, resulting in a low etching rate on the ramp. These results will lead to improved electrical characteristics of ramp-type junctions

    Wrakhout in de woestijn

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